This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.
Providing a comprehensive overview of all the important issues concerning modern Si MOSFETs, this examination covers the principles of MOSFET operation, theory, and scaling issues, as well as offering an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented. An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.
"Nanoscale CMOS has become mainstream technology. This book deals with a very important topic and is written by two well-known contributors to the field. It is a very timely and important book."-Prof. Michael Shur, Rensselaer Polytechnic Institute, USA"This book combines the knowledge of three distinguished authors in a unique blend transcending from early history to modern-day nanotechnology; the text will be enjoyable, educational and illuminating for the technical novice and the modern expert."-Dr. Steven Voldman, ESD Association, USA
